Effect of growth conditions on microstructure of sputtered precursor for CuIn1-xGaxSe2 (CIGS) absorber layer deposited on stainless steel substrates

被引：4

作者：

Behr, M. ^{[1
]}

Sharma, M. ^{[1
]}

Sprague, S. ^{[1
]}

Shinkel, N. ^{[1
]}

Kerbleski, J. ^{[1
]}

Alvey, C. ^{[1
]}

Rozeveld, S. ^{[1
]}

Hasan, T. ^{[1
]}

Wintland, C. ^{[1
]}

Mushrush, M. ^{[1
]}

Wall, A. ^{[1
]}

机构：

[1] Dow Chem Co USA, Midland, MI 48674 USA

来源：

THIN SOLID FILMS | 2018年 / 665卷

关键词：

SOLAR-CELLS; CU(IN; GA)SE-2;

D O I：

10.1016/j.tsf.2018.08.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we report the effect of growth conditions on the properties of sputtered precursor thin films for CuIn1-xGaxSe2 (CIGS) absorber layers. Specifically, precursor films containing Cu, In, Ga, and Se were deposited via co-sputtering on flexible Mo-coated stainless steel substrates over a wide range of compositions and deposition conditions. The impact on precursor film phase, morphology, and elemental distribution was investigated as a function of precursor Se content, substrate temperature, target type (CIG/CIG vs. In/Cu3Ga), and Na content. Precursor films selenized at high temperature (> 500 degrees C) to form stoichiometric CIGS and completed using a CdS n-type buffer layer and transparent conducting oxide window layers exhibited full-cell efficiencies as high as 11.5%.

引用

页码：36 / 45

页数：10

共 11 条

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