Longitudinal displacement measurement of lead zirconate titanate thick films deposited on silicon substrates

被引：0

作者：

Iijima, T. ^{[1
]}

Okino, H. ^{[2
]}

Yamamoto, T. ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Hydrogen Ind Use & Storage, Tsukuba, Ibaraki 3058565, Japan

[2] Natl Def Acad, Dept Commun Engn, Yokosuka, Kanagawa 2398686, Japan

来源：

2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/ISAF.2007.4393223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

10-mu m-thick PZT films were deposited on the Pt/Ti/SiO2/Si substrates, and 20- to 500-mu m-diameter PZT thick film disks on the Si substrate were fabricated. The butterfly shape displacement curves of the top side, bottom side and subtraction of bottom side from top side were measured with twin-beam interferometer, and the effect of the disk diameter on these displacements were compared with FEM simulation. The clamping effect is eliminated when the ratio of the PZT disk diameter, d, to the PZT film thickness, t, is less than three, that is d/t < 3, for 10-mu m-thick PZT film. Therefore, the actual longitudinal displacement of the PZT films can be evaluated for d/t < 3.

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页码：228 / +

页数：2

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