Low g inertial sensor based on high aspect ratio MEMS

被引:2
|
作者
Reze, M [1 ]
Hammond, J [1 ]
机构
[1] Freescale Semicond SAS, Sensor Prod Div, F-31023 Toulouse, France
关键词
low g accelerometer; HARMEMS; DRIE etching; surface micromachining;
D O I
10.1007/3-540-27463-4_34
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
This paper is presenting a new single axis low g inertial sensor based on a High Aspect Ratio MEMS (HARMEMS) transducer combined with a 0.25 mu m SmartMOS (TM) mixed signal ASIC into a single Quad Flat No leaded 16 pin package (QFN). The high logic gate density digital signal processing (DSP) is used for filtering, trim and data formatting while the associated non volatile memory contains the device settings. The micro-machined transducer features an over-damped mechanical response and a high signal to noise ratio. This makes this device ideal for use in Vehicle Stability Control (VSC) or Electrical Parking Brake (EPB) applications where high sensitivity and small zero-g acceleration output error is required.
引用
收藏
页码:459 / 471
页数:13
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