Simulation of phase transitions induced in gallium arsenide by combined laser radiation

被引:2
|
作者
Zhvavyi, SP [1 ]
Ivlev, GD [1 ]
Sadovskaya, OL [1 ]
机构
[1] Belarussian Acad Sci, Inst Elect, Minsk 220090, BELARUS
关键词
Phase Transition; Laser Pulse; Laser Beam; Laser Irradiation; Gallium;
D O I
10.1134/1.1340887
中图分类号
O59 [应用物理学];
学科分类号
摘要
We performed a numerical simulation of phase transitions in gallium arsenide that are induced by the combined action of nanosecond laser pulses initiating melting and an additional neodymium-glass laser irradiation enabling the control of the interface velocity. In the case of counterpropagating laser beams, a strong temperature dependence of the absorption factor at 1.06 mum occurs. It causes a thermal wave, which separates from the melting front and, propagating towards the neodymium-glass laser beam, screens the melt. For copropagating laser beams, regimes with a nonmonotonic time dependence of the melt depth may exist. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码:59 / 62
页数:4
相关论文
共 50 条
  • [1] Simulation of phase transitions induced in gallium arsenide by combined laser radiation
    S. P. Zhvavyi
    G. D. Ivlev
    O. L. Sadovskaya
    Technical Physics, 2001, 46 : 59 - 62
  • [2] Simulation of phase transitions induced in CdTe by pulsed laser radiation
    Urbanovich, A.I.
    Zhvavyi, S.P.
    High Temperature Material Processes, 2014, 18 (04): : 291 - 298
  • [3] ACTION OF LASER RADIATION ON CRYSTALS OF GALLIUM ARSENIDE
    Fedorov, V. A.
    Kuznetsov, P. M.
    Boytsova, M. V.
    Jakovlev, A. V.
    MATERIALS PHYSICS AND MECHANICS, 2012, 13 (01): : 48 - 50
  • [4] INDUCED RADIATION IN GALLIUM ARSENIDE WHEN OPTICALLY EXCITED
    BASOV, NG
    GRASYUK, AZ
    KATULIN, VA
    DOKLADY AKADEMII NAUK SSSR, 1965, 161 (06): : 1306 - &
  • [5] Laser radiation confinement at 1.06 μm in compensated gallium arsenide
    Kalintsev, AG
    Mikheeva, OP
    Sidorov, AI
    TECHNICAL PHYSICS LETTERS, 2001, 27 (12) : 1067 - 1068
  • [6] Laser radiation confinement at 1.06 μm in compensated gallium arsenide
    A. G. Kalintsev
    O. P. Mikheeva
    A. I. Sidorov
    Technical Physics Letters, 2001, 27 : 1067 - 1068
  • [7] INTERVALENCE BAND TRANSITIONS IN GALLIUM ARSENIDE
    BRAUNSTEIN, R
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 280 - 282
  • [8] RECOMBINATION RADIATION OF GALLIUM ARSENIDE
    NASLEDOV, DN
    ROGACHEV, AA
    RYVKIN, SM
    TSARENKOV, BV
    SOVIET PHYSICS-SOLID STATE, 1962, 4 (04): : 782 - 784
  • [9] RADIATION-INDUCED CARBON COMPLEXES IN GALLIUM-ARSENIDE
    CARLONE, C
    REJEB, C
    JORIO, A
    PARENTEAU, M
    KHANNA, SM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4): : 405 - 408
  • [10] Radiation-induced diffusion of carbon and oxygen in arsenide of gallium
    Kratkie Soobshcheniya po Fizike, 2000, (03): : 16 - 21