Analyzing Photo Induced Internal Electric Field in Pentacene/C60 Double-Layer Organic Solar Cells under Various External Voltages by Electric-Field-Induced Optical Second Harmonic Generation Measurement
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作者:
Chen, Xiangyu
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Chen, Xiangyu
[1
]
Taguchi, Dai
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Taguchi, Dai
[1
]
Weis, Martin
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Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81219, SlovakiaTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Weis, Martin
[2
]
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Manaka, Takaaki
[1
]
Iwamoto, Mitsumasa
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Iwamoto, Mitsumasa
[1
]
机构:
[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[2] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81219, Slovakia
By using electric-field-induced optical second-harmonic generation (EFISHG) measurement, we investigated interfacial carrier behavior in pentacene/C-60 double-layer organic solar cells (OSCs). At various external DC biasing conditions, photoinduced electric field in the OSCs was directly probed by the EFISHG measurements. A potential drop was generated by photoillumination, in a manner like a potential difference across an external resistance, while applying an external DC voltage to the OSCs enables us to examine the carrier behaviors over the entire region of the external voltage Vex. Results showed that only organic double-layer interface charging was induced under positive DC biasing by photoillumination, while interface and electrode charging were induced under negative DC biasing. Analyzing the pentacene/C-60 double layer OSCs based on a Maxwell-Wagner model, we showed that the dielectric nature of the organic layers was responsible for the asymmetric charging processes. (C) 2012 The Japan Society of Applied Physics
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, Japan
Taguchi, Dai
Shino, Tatsunori
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, Japan
Shino, Tatsunori
Chen, Xiangyu
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, Japan
Chen, Xiangyu
Zhang, Le
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, Japan
Zhang, Le
Li, Jun
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, Japan
Li, Jun
Weis, Martin
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Slovak Acad Sci, Inst Phys, SK-84511 Bratislava, SlovakiaTokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, Japan
Weis, Martin
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Manaka, Takaaki
Iwamoto, Mitsumasa
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, 2-12-1 S3-33 O Okayama, Tokyo 1528552, Japan
Iwamoto, Mitsumasa
9TH INTERNATIONAL CONFERENCE ON NANO-MOLECULAR ELECTRONICS,
2011,
14
机构:
Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Taguchi, Dai
Shino, Tatsunori
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Shino, Tatsunori
Chen, Xiangyu
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Chen, Xiangyu
Zhang, Le
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Zhang, Le
Li, Jun
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Li, Jun
Weis, Martin
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Slovak Acad Sci, Inst Phys, Bratislava 84511 45, SlovakiaTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Weis, Martin
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Manaka, Takaaki
Iwamoto, Mitsumasa
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Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan