p-type polycrystalline Si films prepared by aluminum induced crystallization

被引：0

作者：

Yu, ZR ^{[1
]}

Matsumoto, Y ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect, Tianjin 300071, Peoples R China

来源：

FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2000年 / 4086卷

关键词：

Al-induced crystallization; thin film poly-Si; Al-doping; Hall mobility; carrier concentration;

D O I：

10.1117/12.408354

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

p-type poly-Si thin films were prepared by aluminum induced crystallization (AIC) and doping of a-Si:H. The a-Si:H precursors were deposited by plamsma enhanced chemical vapor deposition (PECVD) on glass substrates and then covered with thin Al layers of different thickness. The crystallization was performed by conventional thermal annealing. X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS) measurements were carried out to study the structure change and the Al profile in the annealed films. Resistivity, Hall mobility and carrier concentration were also measured. Results showed that poly-Si films could be obtained by annealing a-Si:H in contact with a thin Al layer at 450-550 degreesC for 560 minutes. The crystallized films are p-type and have low resistivity, high Hall mobility and carrier concentration of 0.06 Omega cm, 20 cm(2/)Vs and similar to 10(18) cm(-3), respectively, largely improved compared with the reported results.

引用

页码：87 / 90

页数：4

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