Origin of low-frequency noise in pentacene field-effect transistors

被引:44
|
作者
Xu, Yong [1 ]
Minari, Takeo [2 ,3 ]
Tsukagoshi, Kazuhito [2 ,4 ]
Chroboczek, Jan [1 ]
Balestra, Francis [1 ]
Ghibaudo, Gerard [1 ]
机构
[1] MINATEC, INP Grenoble, IMEP LAHC, F-38016 Grenoble, France
[2] NIMS, MANA, Tsukuba, Ibaraki 3050044, Japan
[3] RIKEN, Wako, Saitama 3510198, Japan
[4] JST, CREST, Kawaguchi, Saitama 3320012, Japan
关键词
Low-frequency noise; Pentacene; Organic transistors; 1/F NOISE; FLUCTUATIONS;
D O I
10.1016/j.sse.2011.01.002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Measurements of power spectral density (PSD) of low-frequency noise (LFN) in pentacene field-effect transistors reveal the preponderance of a 1/f-type PSD behavior with the amplitude varying as the squared transistor gain and increasing as the inverse of the gate surface area. Such features impose an interpretation of LFN by carrier number fluctuations model involving capture/release of charges on traps uniformly distributed over the gate surface. The surface slow trap density extracted by the noise analysis is close to the surface states density deduced independently from static I(V) data, which confirms the validity of the proposed LFN interpretation. Further, we found that the trap densities in bottom-contact (BC) devices were higher than in their top-contact (TC) counterparts, in agreement with observations of a poorer crystal structure of BC devices, in the contact regions in particular. At the highest bias the noise originating from the contact resistance is also shown to be a dominant component in the PSD, and it is well explained by the noise originating from a gate-voltage dependent contact resistance. A gate area scaling was also performed, and the good scaling and the dispersion at the highest bias confirm the validity of the applied carrier number fluctuations model and the predominant contact noise at high current intensities. (C) 2011 Elsevier Ltd All rights reserved.
引用
收藏
页码:106 / 110
页数:5
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