p-Type MgZnO thin films grown using N delta-doping by plasma-assisted molecular beam epitaxy

被引：25

作者：

Liu, W. W. ^{[1
,2
]}

Yao, B. ^{[1
]}

Li, Y. F. ^{[1
]}

Li, B. H. ^{[1
]}

Zhang, Z. Z. ^{[1
]}

Shan, C. X. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Shen, D. Z. ^{[1
]}

Fan, X. W. ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 504卷 / 02期

基金：

中国国家自然科学基金;

关键词：

p-Type; delta-Doping; Zn3N2; MgZnO thin film; ENHANCEMENT; NITROGEN;

D O I：

10.1016/j.jallcom.2010.05.148

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Uniform N-doped MgZnO (MgZnO:N) films and the films with layer structure of MgZnO:N/Zn3N2/MgZnO:N (delta-doped MgZnO:N) were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy in the temperature range of 350-650 degrees C, respectively. The delta-doped MgZnO:N shows n-type conductivity in the growth temperatures ranging from 650 to 450 degrees C, but p-type conductivity with hole concentration of 3.41 x 10(17) cm(-3), mobility of 0.49 cm(2)/Vs and resistivity of 48.50 Omega cm at the growth temperature of 350 degrees C. However, all of the MgZnO:N films show n-type conductivity. The p-type delta-doped MgZnO:N is proven to be stable and reproducible, indicating that delta-doping technique combined with low growth temperature is an efficient way to fabricate p-type MgZnO:N films. The effects of the Zn3N2 delta layer on the formation and properties of the p-type delta-doped MgZnO:N is discussed. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

引用

页码：484 / 487

页数：4

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[1] Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy
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[J]. APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4956 - 4958
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Kim, C
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[9] n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy
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[10] Low resistance ohmic contact on p-type GaN grown by plasma-assisted molecular beam epitaxy
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