4H-SiC band structure investigated by surface photovoltage spectroscopy

被引：7
|
作者：
Fabbri, F. [3 ,4 ]
Cavalcoli, D. [1 ,2 ]
Cavallini, A. [1 ,2 ]
机构：
[1] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
[2] CNISM, I-40127 Bologna, Italy
[3] IMEM CNR Inst, I-43100 Parma, Italy
[4] Natl Inst Mat Sci, Adv Elect Mat Ctr, Nano Device Characterizat Grp, Tsukuba, Ibaraki 3050044, Japan
来源：
ACTA MATERIALIA | 2012年 / 60卷 / 08期
关键词：
Silicon carbide; Band structure; Stacking fault; Intrinsic defect; SILICON-CARBIDE; 4H; POLYTYPES;
D O I：
10.1016/j.actamat.2012.02.047
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The conduction and valence band structure of high-purity 4H-SiC epilayers have been studied by surface photovoltage spectroscopy (SPS). A comparison between defect-free and single-layer stacking fault affected areas is reported. Electronic transitions, determined by SPS, are in good agreement with ab initio calculations. Electronic transitions and changes in band occupation have been observed in stacking fault rich areas below the band gap. Moreover, stacking faults induce the presence of a split-off band below the conduction band and a modification of the electron density of states in the conduction band always at the M point. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：3350 / 3354
页数：5
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