Flip-chip Interconnects Based on Solution Deposited Carbon Nanotube Bumps

被引：0
|
作者：
Xu, Pingye [1 ]
Hamilton, Michael C. [1 ]
机构：
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
来源：
2014 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE / ADVANCED METALLIZATION CONFERENCE (IITC/AMC) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A solution based fabrication process of carbon nanotube (CNT) bump interconnects is proposed. In comparison to CVD growth of CNT which requires high process temperature, the proposed process has the advantage of being capable to fabricate CNT bumps at room temperature with relatively high resolution and adjustable bump height. The average resistance of the fabricated CNT bumps was measured to be 904 m Omega, comparable to the resistance of the transferred CVD grown CNT bumps.
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页码：147 / 149
页数：3
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