Technological issues for high-density MRAM

被引：0
|
作者：
Kim, Taewan [1 ]
Hwang, Injun [1 ]
Cho, Young-jin [1 ]
Kim, Kwang-suk [1 ]
Kim, Keewon [1 ]
机构：
[1] Samsung Adv Inst Technol, Semicond Devices & Mat Lab, Suwon 440600, South Korea
来源：
IEEE NMDC 2006: IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE 2006, PROCEEDINGS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：182 / 182
页数：1
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