Structuring of carbon layers in Si-C-O systems studied on atomic scale

The metal-mediated graphitisation is applied for a structuring of interlayers in composite materials of the system Si-C-O. High resolution and analytical electron microscopical methods including electron energy loss spectroscopy (esp. near the ionisation edge) and energy dispersive X-ray spectroscopy reveal a complex interlayer system. After deposition of Pt or Ni on the silicon carbide surface, a distinct increase in the degree of graphitisation and texturisation of the reaction layer with micromechanical relevance is observed. The kinetics of layer formation and graphitisation have been shown to comprise two different metal-mediated processes as well as reactions with oxygen by diffusion from the matrix. (c) 2004 Elsevier B.V. All rights reserved.