Conductance switching, hysteresis, and magnetoresistance in organic semiconductors

被引:29
|
作者
Wei, J. H. [1 ]
Xie, S. J.
Mei, L. M.
Berakdar, J.
Yan, Wing
机构
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China
[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany
[3] Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
conductance switching; hysteresis; giant magnetoresistance; organic spintronics;
D O I
10.1016/j.orgel.2007.03.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. We show how the formation of polaron in the organic sub-structure leads to a hysteretic conductance switching, via sweeping either the bias voltage or the electrochemical potential. We further obtain an exponential dependence of the magnetoresistance as a function of the applied bias voltage. The implications of calculated results in relation to experiments and device applications are addressed and commented. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:487 / 497
页数:11
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