Numerical simulation of millisecond laser-induced output current in silicon-based positive-intrinsic-negative photodiode

被引：4
|
作者：
Wei, Z. [1 ]
Wang, D. [1 ]
Jin, G. Y. [1 ]
机构：
[1] Changchun Univ Sci & Technol, Sch Sci, Jilin Key Lab Solid State Laser Technol & Applica, Changchun 130022, Peoples R China
来源：
OPTIK | 2020年 / 207卷
基金：
中国国家自然科学基金;
关键词：
Numerical simulation; Millisecond pulse laser; Output current; Photodiode;
D O I：
10.1016/j.ijleo.2019.163806
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Based on the photoelectric effect, the output current model of the silicon-based positive-intrinsicnegative (PIN) photodiode irradiated by millisecond pulse laser was established; the time distribution of the output current on the PIN photodiode under different bias voltages, energy densities, and pulse widths were calculated. The results showed that the output current process of PIN photodiode irradiated by millisecond laser could be divided into three stages: photo-generated current stage, conduction stage and recovery stage; at the photo-generated current stage, the peak value of output current increased with the increase of energy density and bias voltage; at the conduction stage, with the increase of energy density the value of output current remained the same while increased with the increase of bias voltage; at the recovery stage, with the increase of bias voltage the value of recovery time remained the same while increased with the increase of energy density. In this paper, the simulation results were consistent with the experiment results.
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页数：5
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