Electronic structure of Ga1-xMnxAs studied by photoemission spectroscopy

被引：0

作者：

Okabayashi, J ^{[1
]}

Kimura, A ^{[1
]}

Rader, O ^{[1
]}

Mizokawa, T ^{[1
]}

Fujimori, A ^{[1
]}

Hayashi, T ^{[1
]}

Tanaka, M ^{[1
]}

机构：

[1] Univ Tokyo, Dept Phys, Bunkyou Ku, Tokyo 1130033, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have obtained the Mn 3d partial density of states in Ga1-xMnxAs and energy-band dispersion by photoemission techniques to study the Mn doing effects in GaAs. We found that states near the Fermi level largely derived from As 4p states with some admixture of Mn 3d character. We also observed non-dispersive impurity-band like states near the Fermi level, which may give a key to understand the anomalous properties of Ga1-xMnxAs.

引用

页码：262 / 263

页数：2

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