Electron irradiation effects on the Schottky diode characteristics of p-Si

被引：17
|
作者：
Krishnan, Sheeja [1 ]
Sanjeev, Ganesh [2 ]
Pattabi, Manjunatha [1 ]
机构：
[1] Mangalore Univ, Dept Mat Sci, Mangalagangothri 574199, Karnataka, India
[2] Mangalore Univ, Dept Phys, Microtron Ctr, Mangalagangothri 574199, Karnataka, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 04期
关键词：
Si; Schottky diodes; I-V; electron irradiation;
D O I：
10.1016/j.nimb.2007.11.049
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Particle irradiation can induce transient and permanent changes in the electrical properties of semiconductor devices in radiation environments. The effects of electron irradiation on the device properties of Al/p-Si Schottky diodes are reported here. Schottky diodes were exposed to a maximum cumulative dose of 100 kGy at room temperature. Their forward and reverse current-voltage (I-V) characteristics were studied at room temperature. The diode parameters such as ideality factor, reverse saturation current, barrier height and series resistance were calculated from the forward I-V characteristics. An increase in the values of the ideality factor and a decrease in the barrier height values were observed over this dose range. Also, the reverse current was found to increase with increasing dose. (C) 2007 Elsevier B.V. All rights reserved.
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页码：621 / 624
页数：4
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