Ge related defect energy and microcavity effect in GaN epitaxial layer

被引：3
|
作者：
Zhao, YG [1 ]
Cheng, L
Huang, XL
Zhang, GY
Li, J
Yang, ZJ
机构：
[1] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[3] Beijing Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 1998年 / 15卷 / 09期
关键词：
D O I：
10.1088/0256-307X/15/9/018
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photoluminescence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450 nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.
引用
收藏
页码：674 / 676
页数：3
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