Relation between residual voltage ratio and microstructural parameters of ZNO varistors

被引:0
|
作者
Li, ST [1 ]
Xie, F [1 ]
Liu, FY [1 ]
机构
[1] Xian Jiao Tong Univ, Inst Elect Insulat, Xian 710049, Shaanxi Prov, Peoples R China
关键词
D O I
10.1109/ISEIM.1998.741679
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of thickness on residual voltage ratio K-r of ZnO varistors is experimentally studied, which shows that dimensional effect of K-r also exists. The relations are experimentally investigated between residual voltage ratio K-r and breakdown strength E-1mA, & K-r and microstructural parameters. It is obtained that K-r decreases with E-1mA, increases with average grain size mu. An integrated parameter-the product of average grain size mu and grain size variance sigma(2) is found to be a better parameter to show the relation between electrical properties and microstructure of ZnO varistors, A microstructural model for simulation is proposed. By using computer, the relations are simulated between K-r and thickness, K-r and average grain size mu & K-r and the product sigma(2)mu. The simulated results are consistent with experimental ones.
引用
收藏
页码:39 / 42
页数:4
相关论文
共 50 条
  • [1] The relation between residual voltage ratio and microstructural parameters of ZnO varistors
    Li, ST
    Feng, X
    Liu, FY
    Li, JY
    Alim, MA
    [J]. MATERIALS LETTERS, 2005, 59 (2-3) : 302 - 307
  • [2] Nickel oxide doping effects on electrical characteristics and microstructural phases of ZnO varistors with low residual voltage ratio
    He, Jinliang
    Long, Wangcheng
    Hu, Jun
    Liu, Jun
    [J]. JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2011, 119 (1385) : 43 - 47
  • [3] The effect of aluminium oxide on the residual voltage of ZnO varistors
    Houabes, M
    Bernik, S
    Talhi, C
    Bui, A
    [J]. CERAMICS INTERNATIONAL, 2005, 31 (06) : 783 - 789
  • [4] Dependence of residual voltage ratio behavior of SnO-based varistors on NbOaddition
    WEI QiaoYuanHE JinLiang HU Jun State Key Laboratory of Power SystemsDepartment of Electrical EngineeringTsinghua UniversityBeijing China
    [J]. Science China(Technological Sciences), 2011, (06) - 1418
  • [5] Relation between grain boundary and electrical degradation of ZnO varistors
    Takada, Masayuki
    Yoshikado, Shinzo
    [J]. ELECTROCERAMICS IN JAPAN IX, 2006, 320 : 117 - 120
  • [6] Influences of dopants on the microstructural nonuniformity of ZnO varistors
    He, Jinliang
    Hu, Jun
    Luo, Fengchao
    [J]. HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 503 - 506
  • [7] Residual Voltage Properties of ZnO Varistors Doped with Y2O3 for High Voltage Gradient
    Hu, Jun
    Liu, Jun
    He, Jinliang
    Long, Wangchen
    Luo, Fengehao
    [J]. ICPADM 2009: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1-3, 2009, : 1154 - 1157
  • [8] Effect of Sintering Temperature on the Microstructural Evolution of ZnO Varistors
    Wenbin Cao
    Yuwei Guo
    Jinfeng Su
    Jianke Liu
    [J]. Journal of Electronic Materials, 2023, 52 : 1266 - 1273
  • [9] Microstructural analysis of varistors prepared from nanosize ZnO
    Pillai, SC
    Kelly, JM
    McCormack, DE
    Ramesh, R
    [J]. MATERIALS SCIENCE AND TECHNOLOGY, 2004, 20 (08) : 964 - 968
  • [10] Effect of Sintering Temperature on the Microstructural Evolution of ZnO Varistors
    Cao, Wenbin
    Guo, Yuwei
    Su, Jinfeng
    Liu, Jianke
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2023, 52 (02) : 1266 - 1273