Intrinsic functionality of 2D materials is crucial for both fundamental studies and practical applications. In particular, 2D magnetism has recently emerged as a major research field bringing in new concepts, physical effects, and device designs. However, the list of stoichiometric 2D magnets is still rather short and would benefit from extension by magnetic graphene derivatives. Here, the graphite intercalation compound EuC6 is scaled down to an Eu/graphene bilayer, an approach inspired by studies of magnetic Eu/silicene (EuSi2) and Eu/germanene (EuGe2). The material, synthesized by Eu deposition on graphene, exhibits 2D ferromagnetism evidenced by low-magnetic-field control over the effective transition temperature. The ferromagnetic state is further manifested by the emergence of negative magnetoresistance and an anomalous Hall effect. Remarkably, induced magnetism does not destroy the parental electronic structure - in the Eu/graphene bilayer, quantum oscillations reveal low-mass carriers, a property inherited from graphene. The material can make an important ingredient of van der Waals heterostructures to be applied in ultracompact spintronics and quantum computing.
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Beihang Univ, Sch Instrumentat Sci & Optoelect Engn, Beijing 100191, Peoples R China
Beihang Univ, Inst Precis Instrument & Quantum Sensing, Beijing 100191, Peoples R ChinaBeihang Univ, Sch Instrumentat Sci & Optoelect Engn, Beijing 100191, Peoples R China
Tan, Haoyi
Shan, Guangcun
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Beihang Univ, Sch Instrumentat Sci & Optoelect Engn, Beijing 100191, Peoples R China
Beihang Univ, Inst Precis Instrument & Quantum Sensing, Beijing 100191, Peoples R China
City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon Tong, Hong Kong, Peoples R ChinaBeihang Univ, Sch Instrumentat Sci & Optoelect Engn, Beijing 100191, Peoples R China
Shan, Guangcun
Pacchioni, Gianfranco
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Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, ItalyBeihang Univ, Sch Instrumentat Sci & Optoelect Engn, Beijing 100191, Peoples R China
机构:
Univ Hong Kong, Phys Dept, Hong Kong 999077, Peoples R ChinaUniv Hong Kong, Phys Dept, Hong Kong 999077, Peoples R China
Wang, Xiong
Li, Dian
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Univ Hong Kong, Phys Dept, Hong Kong 999077, Peoples R ChinaUniv Hong Kong, Phys Dept, Hong Kong 999077, Peoples R China
Li, Dian
Li, Zejun
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Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R ChinaUniv Hong Kong, Phys Dept, Hong Kong 999077, Peoples R China
Li, Zejun
Wu, Changzheng
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Univ Sci & Technol China, CAS Ctr Excellence Nanosci, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
Univ Sci & Technol China, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R ChinaUniv Hong Kong, Phys Dept, Hong Kong 999077, Peoples R China
Wu, Changzheng
Che, Chi-Ming
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Univ Hong Kong, Dept Chem, State Key Lab Synthet Chem, HKU CAS Joint Lab New Mat, Hong Kong 999077, Peoples R ChinaUniv Hong Kong, Phys Dept, Hong Kong 999077, Peoples R China
Che, Chi-Ming
Chen, Gang
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Univ Hong Kong, Phys Dept, Hong Kong 999077, Peoples R ChinaUniv Hong Kong, Phys Dept, Hong Kong 999077, Peoples R China
Chen, Gang
Cui, Xiaodong
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Univ Hong Kong, Phys Dept, Hong Kong 999077, Peoples R ChinaUniv Hong Kong, Phys Dept, Hong Kong 999077, Peoples R China