Simulation of recombination pumped aluminum soft X-ray laser

被引：1

作者：

Zhu, CJ ^{[1
]}

Ozaki, T ^{[1
]}

Orimo, S ^{[1
]}

Kanai, T ^{[1
]}

Liang, JQ ^{[1
]}

Kuroda, H ^{[1
]}

Aoki, T ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1996年 / 33卷 / 1-3期

关键词：

D O I：

10.1016/0960-8974(96)83658-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Extensive studies of simulation of recombination pumped Aluminum soft X-ray lasers scheme have been performed. Gain is observed for the H-like n=3-2 and He-like n=4-3 transition. It is shown that with shorter pulse driving lasers, gain increases. The dependence of gain on the driving laser pulse width is explained by the relation of electron temperature, electron density and ion ground state population with three body recombination process. Agreement is achieved between simulation and experiment for population inversions between the He-Like Al n=4-3 levels.

引用

页码：285 / 288

页数：4

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