Defects in optoelectronic materials due to phosphorus-containing underlayer

被引:2
|
作者
Cheng, WH [1 ]
Chen, CH
Wang, SC
Tu, YK
Hsieh, KC
机构
[1] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung, Taiwan
[2] Chunghwa Telecom Labs, Tao Yuan, Taiwan
[3] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung, Taiwan
关键词
Au coating; crack defect; laser welding; optoelectronic packaging; P-containing underlayer;
D O I
10.1007/s11664-998-0121-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the new observation that the crack formation mechanism in a laser-welded Au-coated optoelectronic material is due to the existence of P-containing underlayer and is not due to the thickness of the Au plating layer. Therefore, to solve the problem of crack formation in laser-welded Au-coated optoelectronic materials, it is strongly recommended that a Ni underlayer with P-free electroplating instead of P-containing electroless plating should be used prior to plating Au on optoelectronic materials.
引用
收藏
页码:L47 / L50
页数:4
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