Higher Ultrasonic Frequency Liquid Phase Exfoliation Leads to Larger and Monolayer to Few-Layer Flakes of 2D Layered Materials

被引:27
|
作者
Telkhozhayeva, Madina [1 ,2 ]
Teblum, Eti [1 ,2 ]
Konar, Rajashree [1 ,2 ]
Girshevitz, Olga [3 ]
Perelshtein, Ilana [3 ]
Aviv, Hagit [1 ,2 ]
Tischler, Yaakov R. [1 ,2 ]
Nessim, Gilbert Daniel [1 ,2 ]
机构
[1] Bar Ilan Univ, Dept Chem, IL-52900 Ramat Gan, Israel
[2] Bar Ilan Univ, Inst Nanotechnol, IL-52900 Ramat Gan, Israel
[3] Bar Ilan Univ, Inst Nanotechnol & Adv Mat, IL-52900 Ramat Gan, Israel
基金
欧盟地平线“2020”;
关键词
2-DIMENSIONAL MATERIALS; HIGH-QUALITY; GRAPHENE; GRAPHITE; CATALYST; SIZE;
D O I
10.1021/acs.langmuir.0c03668
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Among the most reliable techniques for exfoliation of two-dimensional (2D) layered materials, sonication-assisted liquid-phase exfoliation (LPE) is considered as a cost-effective and straightforward method for preparing graphene and its 2D inorganic counterparts at reasonable sizes and acceptable levels of defects. Although there were rapid advances in this field, the effect and outcome of the sonication frequency are poorly understood and often ignored, resulting in a low exfoliation efficiency. Here, we demonstrate that simple mild bath sonication at a higher frequency and low power positively contributes to the thickness, size, and quality of the final exfoliated products. We show that monolayer graphene flakes can be directly exfoliated from graphite using ethanol as a solvent by increasing the frequency of the bath sonication from 37 to 80 kHz. The statistical analysis shows that similar to 77% of the measured graphene flakes have a thickness below three layers with an average lateral size of 13 mu m. We demonstrate that this approach works for digenite (Cu9S5) and silver sulfide (Ag2S), thus indicating that this exfoliation technique can be applied to other inorganic 2D materials to obtain high-quality few-layered flakes. This simple and effective method facilitates the formation of monolayer/few layers of graphene and transition metal chalcogenides for a wide range of applications.
引用
收藏
页码:4504 / 4514
页数:11
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