Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magneli filaments

被引：63

作者：

Kim, Gun Hwan ^{[1
,2
]}

Lee, Jong Ho ^{[1
,2
]}

Seok, Jun Yeong ^{[1
,2
]}

Song, Seul Ji ^{[1
,2
]}

Yoon, Jung Ho ^{[1
,2
]}

Yoon, Kyung Jean ^{[1
,2
]}

Lee, Min Hwan ^{[1
,2
]}

Kim, Kyung Min ^{[1
,2
]}

Lee, Hyung Dong ^{[3
]}

Ryu, Seung Wook ^{[3
]}

Park, Tae Joo ^{[4
]}

Hwang, Cheol Seong ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[4] Hanyang Univ, Dept Mat Engn, Ansan 426791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 26期

关键词：

MEMORIES;

D O I：

10.1063/1.3600784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A modified biasing scheme was adopted to improve the electrical endurance characteristics of conducting filamentary resistive switching (RS) in a Pt/TiO2/Pt RS cell. The modified bias scheme included the application of bias voltages with alternating polarity, even though RS proceeds in non-polar mode, which results in the stable distribution of each resistance states as well as improved endurance. This was attributed to the minimized consumption of oxygen ions in the TiO2 film, which can be induced by the formation of hourglass-shaped conducting filament (HSCF). The presence of a HSCF was confirmed by high-resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600784]

引用

页数：3

共 50 条

[1] Resistive Switching in Au/TiO2/Pt Thin Film Structures
Yarmarkin, V. K.
Shul'man, S. G.
Lemanov, V. V.
[J]. FERROELECTRICS, 2009, 391 : 139 - 150
[2] Effect of post annealing on the resistive switching of TiO2 thin film
Kim, Wan-Gee
Rhee, Shi-Woo
[J]. MICROELECTRONIC ENGINEERING, 2009, 86 (11) : 2153 - 2156
[3] BIPOLAR RESISTIVE SWITCHING IN Au/TiO2/Pt THIN FILM STRUCTURES
Yarmarkin, V. K.
Shulman, S. G.
Lemanov, V. V.
[J]. INTEGRATED FERROELECTRICS, 2008, 100 : 274 - 284
[4] Resistive Switching in Au/TiO2/Pt Thin Film Structures on Silicon
Yarmarkin, V. K.
Shul'man, S. G.
Lemanov, V. V.
[J]. PHYSICS OF THE SOLID STATE, 2008, 50 (10) : 1841 - 1847
[5] Resistive switching in Au/TiO2/Pt thin film structures on silicon
V. K. Yarmarkin
S. G. Shul’man
V. V. Lemanov
[J]. Physics of the Solid State, 2008, 50 : 1841 - 1847
[6] Resistive switching of oxygen enhanced TiO2 thin-film devices
Salaoru, Iulia
Prodromakis, Themistoklis
Khiat, Ali
Toumazou, Christofer
[J]. APPLIED PHYSICS LETTERS, 2013, 102 (01)
[7] Effect of the top electrode material on the resistive switching of TiO2 thin film
Kim, Wan-Gee
Rhee, Shi-Woo
[J]. MICROELECTRONIC ENGINEERING, 2010, 87 (02) : 98 - 103
[8] Improved Resistive Switching Properties of Solution Processed TiO2 Thin Films
Biju, Kuyyadi P.
Liu, Xinjun
Bourim, El Mostafa
Kim, Insung
Jung, Seungjae
Park, Jubong
Hwang, Hyunsang
[J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (12) : H443 - H446
[9] Pulse-induced resistive and capacitive switching in TiO2 thin film devices
Salaoru, Iulia
Khiat, Ali
Li, Qingjiang
Berdan, Radu
Prodromakis, Themistoklis
[J]. APPLIED PHYSICS LETTERS, 2013, 103 (23)
[10] Effect of the top electrode materials on the resistive switching characteristics of TiO2 thin film
Oh, Sang Chul
Jung, Ho Yong
Lee, Heon
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)

← 1 2 3 4 5 →