Low-frequency noise in TFSOI lateral N-P-N bipolar transistors

Low-frequency (1/f) noise is characterized as a function of base current density (J(B)) On thin-film-silicon-on-insulator (TFSOI) lateral bipolar transistors [1], In the low injection region of operation, the noise power spectral density was proportional to J(B)(1.8) for J(B) < 0.4 <mu>A/mum(2) Which suggest that the noise in these devices is primarily dominated by a uniform distribution of noise sources across the emitter-base area. However in the high current region of operation (J(B) > 0.4 muA/mum(2)),the noise bias dependence shifts to J(B)(1.2) indicating current crowding effects alter the contribution of noise sources near the extrinsic base link region of the device, In addition to the expected 1/f noise and shot noise, we have observed a bias dependent generation-recombination (G/R) noise source in some of the devices. This G/R noise is correlated to random-telegraph-signal (RTS) noise resulting from single trapping renters, located at or near the spacer oxide and/or the Si to SIMOX interface, which modulate the emitter-base space charge region.