Features of the microwave breakdown of a high-Tc superconducting film at defects

被引:0
|
作者
Buznikov, NA [1 ]
Pukhov, AA [1 ]
机构
[1] Russian Acad Sci, Sci Res Ctr Appl Problems Electrodynam, Joint Inst High Temp, Moscow, Russia
基金
俄罗斯基础研究基金会;
关键词
D O I
10.1134/1.1262249
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of nonsuperconducting defects on the power density for microwave breakdown of a high-T-c superconducting film is investigated theoretically. It is found that the scenario of the destruction of superconductivity depends substantially on the shape of the defect and on the ratio of the absorption coefficients of the defect and film. It is shown that the breakdown power density at a defect may be higher than or equal to the threshold power density for microwave breakdown of a homogeneous film. (C) 1998 American Institute of Physics.
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收藏
页码:697 / 699
页数:3
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