Misalignment measurement with dual-frequency moire fringe in nanoimprint lithography

We explore an easy-to-implement moire-based measurement scheme for the mask-wafer misalignment in nanoimprint lithography. By introducing the beat signal of moire fringes, the measurement range increase by dozens or even hundreds of times, while the measurement accuracy doesn't get affected and still kept in nanoscale. Moreover, the alignment signal, collected throughout the whole imprint process, is independent of the wafer-mask gap and beam fluctuation, which makes it very suitable for the misalignment measurement in NIL. The experiment shows that sub-10 nm alignment could be obtained within a measurement range of 500 mu m, which is expected to be improved after the parameter optimization. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement