Current Enhanced Double-Gate TFET with Source Pocket and Asymmetric Gate Oxide

被引：0
|
作者：
Yu, Zhonghua [1 ]
Dong, Yunpeng [1 ]
Lin, Xinnan [1 ]
Zhang, Lining [2 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, ECE, Shenzhen, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
来源：
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年
关键词：
double-gate tunneling FET; asynunetric gate oxide; source pocket;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enchance the current drive. Compared with conventional DG-TFET,the propsed TFET has steeper average subthreshold swing (SS), larger on currents, smaller supply voltage.The resason of improvements is mainly attributed to the enhanced tunneling electric field high-k gate oxide brings and larger tunneling area cuased by the source pocket.
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页数：2
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