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Three-band k.p Hamiltonian of monolayer MoS2 based on the group theory and infinitesimal basis transformations approach
被引:4
|作者:
Beiranvand, Khadijeh
[1
]
Dezfuli, Abdolmohammad Ghalambor
[1
,2
]
Sabaeian, Mohammad
[1
,2
]
机构:
[1] Shahid Chamran Univ Ahvaz, Fac Sci, Dept Phys, Ahvaz, Iran
[2] Shahid Chamran Univ Ahvaz, Ctr Res Laser & Plasma, Ahvaz, Iran
关键词:
Two-dimensional material;
Transition metal dichalcogenides;
Monolayer MoS2-band structure;
k.p method-infinitesimal basis transformations perturbations theory;
QUANTUM DOTS;
DIODES;
D O I:
10.1016/j.physb.2017.09.122
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
In this work, we present the matrix representation of three-band low-energy k.p Hamiltonian of monolayer MoS2 (ML-MDS) based on the group theory and infinitesimal basis transformations approach. We have derived the matrix representation of k.p Hamiltonian up to the second-order of perturbation at the Gamma point of the Brillouin zone. Due to the symmetries of doubly degenerate conduction band (CB), namely the CB+1 and (CB+1)', the optical transitions from these bands to valance band (VB) are allowed. Therefore, we have chosen three bands to describe the dynamics of ML-MDS around the G point. We have obtained three main 3 x 3 matrices including a zero-order matrix describing the edge band energies, a first-order matrix describing the coupling of VB, CB + 1, and (CB + 1)' away from the G point, and a second-order matrix which is itself consisted of three matrices as a free-electron energy matrix, an isotropic diagonal matrix and a anisotropic matrix. The whole matrix definitely show the isotropic and parabolic properties of VB and the anisotropy property of two degenerate CB + 1 and (CB + 1)'.
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页码:66 / 71
页数:6
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