Polar Organic Gate Dielectrics for Graphene Field-Effect Transistor-Based Sensor Technology

被引:8
|
作者
Kam, Kevin A. [1 ]
Tengan, Brianne I. C. [1 ]
Hayashi, Cody K. [2 ]
Ordonez, Richard C. [2 ]
Garmire, David G. [1 ]
机构
[1] Univ Hawaii Manoa, Dept Elect Engn, Honolulu, HI 96822 USA
[2] Space & Naval Warfare Syst Command Pacific, Pearl City, HI 96782 USA
关键词
graphene field-effect transistors; polar organic dielectrics; flexible graphene-based sensor technology; ION GEL; LAYER;
D O I
10.3390/s18092774
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We have pioneered the use of liquid polar organic molecules as alternatives to rigid gate-dielectrics for the fabrication of graphene field-effect transistors. The unique high net dipole moment of various polar organic molecules allows for easy manipulation of graphene's conductivity due to the formation of an electrical double layer with a high-capacitance at the liquid and graphene interface. Here, we compare the performances of dimethyl sulfoxide (DMSO), acetonitrile, propionamide, and valeramide as polar organic liquid dielectrics in graphene field-effect transistors (GFETs). We demonstrate improved performance for a GFET with a liquid dielectric comprised of DMSO with high electron and hole mobilities of 154.0 cm(2)/Vs and 154.6 cm(2)/Vs, respectively, and a Dirac voltage <5 V.
引用
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页数:10
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