Nano-size ferroelectric structures

被引：0

作者：

Alexe, M ^{[1
]}

Harnagea, C ^{[1
]}

Pignolet, A ^{[1
]}

Hesse, D ^{[1
]}

Gösele, U ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Saale, Germany

来源：

PIEZOELECTRIC MATERIALS: ADVANCES IN SCIENCE, TECHNOLOGY AND APPLICATIONS | 2000年 / 76卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In the present work ferroelectric structures with lateral sizes as small as 100 nm were fabricated by electron beam direct writing. Switching of single 100 nm cells was achieved and piezoelectric hysteresis loops were recorded using scanning probe microscopy working in piezoresponse mode. The ability to scale down ferroelectric capacitors down to sizes below 1 mum(2) and the possibility to achieve densities of 64 Mbit to 4 Gbit for non-volatile ferroelectric memories is thus demonstrated.

引用

页码：49 / 57

页数：9

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