Addressing Resiliency of In-Memory Floating Point Computation

被引:1
|
作者
Ensan, Sina Sayyah [1 ]
Ghosh, Swaroop [1 ]
Motaman, Seyedhamidreza [1 ]
Weast, Derek [1 ]
机构
[1] Penn State Univ, Sch Elect Engn & Comp Sci, University Pk, PA 16802 USA
关键词
Computer architecture; Circuit faults; Logic gates; Logic arrays; Resistance; Nonvolatile memory; Arithmetic; Floating point (FP); in-memory computing (IMC); resiliency; resistive RAM (RRAM) crossbar;
D O I
10.1109/TVLSI.2022.3170542
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In-memory computing (IMC) can eliminate data movement between processor and memory, which is a barrier to the energy efficiency and performance in von Neumann computing. Due to low power consumption, fast operation, and tiny footprint in crossbar architecture, resistive RAM (RRAM) is one of the most promising devices for IMC applications. We present FPCAS, a pipelined floating point (FP) arithmetic (addition/ subtraction) solver based on RRAM crossbars. Although promis-ing, RRAM-based computing may experience random failures, such as the stuck-at fault where RRAM cells are stuck at either a high-resistance state (HRS), i.e., stuck-at-0 (SA0), or a low-resistance state (LRS), i.e., stuck-at-1 (SA1). We propose techniques to prevent SA1 failures, namely, shifting-at-the-output (SATO), force to $V_{ DD}$ (FTV), and force to ground (FTG) since 96% of the RRAMs employed in our architecture are in HRS. Using an extra clock cycle, both strategies employ the memory array's fault-free RRAMs to conduct the computation. When the failure rate is less than 2%, SATO can manage more than 70% of faults, whereas FTV can handle more than 90% of faults at low power and low area overhead. Simulation results reveal that, for NAND-NAND- and NOR-NOR-based implementations, FPCAS consumes 335 and 322 pJ, respectively. Both implementations incur a performance overhead of 50% at the array level and 4% for pipelined FP implementation.
引用
收藏
页码:1172 / 1183
页数:12
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