Fluence dependant formation of β-SiC by ion implantation and thermal annealing

被引：6

作者：

Poudel, P. R. ^{[1
]}

Rout, B. ^{[1
]}

Diercks, D. R. ^{[2
]}

Strzhemechny, Y. M. ^{[3
]}

Mcdaniel, F. D. ^{[1
]}

机构：

[1] Univ N Texas, Dept Phys, Ion Beam Modificat & Anal Lab, Denton, TX 76203 USA

[2] Univ N Texas, Ctr Adv Res & Technol, Denton, TX 76207 USA

[3] Texas Christian Univ, Dept Phys & Astron, Ft Worth, TX 76129 USA

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2011年 / 104卷 / 01期

关键词：

LIGHT-EMITTING-DIODES; SILICON-CARBIDE; BEAM SYNTHESIS; X-RAY; CARBON; LAYERS; SPECTROSCOPY; CRYSTALLINE; EMISSION; GROWTH;

D O I：

10.1007/s00339-010-6099-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The beta-SiC nanocrystals were synthesized by the implantation of carbon ions (C-) into silicon followed by high-temperature annealing. The carbon fluences of 1x10(17), 2x10(17), 5x10(17), and 8x10(17) atoms/cm(2) were implanted at an ion energy of 65 keV. It was observed that the average size of beta-SiC crystals decreased and the amount of beta-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100 A degrees C for 1 h. However, it was observed that the amount of beta-SiC linearly increased with the implanted fluences up to 5x10(17) atoms/cm(2). Above this fluence the amount of beta-SiC appears to saturate. The Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and X-ray diffraction (XRD) techniques were used to characterize the samples.

引用

页码：183 / 188

页数：6

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