Four-Terminal Polycrystalline-Silicon Thin-Film Transistors with High-k HfO2 Dielectric on Glass Substrate

被引：0

作者：

Kudo, Kenta ^{[1
]}

Kimura, Jyunki ^{[1
]}

Suzuki, Takumi ^{[1
]}

Nishiguchi, Naoki ^{[1
]}

Hara, Akito ^{[1
]}

机构：

[1] Tohoku Gakuin Univ, Dept Engn, 10-1 Chuo-1, Tagajo, Miyagi 9858537, Japan

来源：

PROCEEDINGS OF AM-FPD 21: THE TWENTY-EIGHTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES - TFT TECHNOLOGIES AND FPD MATERIALS | 2021年

基金：

日本学术振兴会;

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this study, four-terminal polycrystalline-silicon thin-film transistors (4T poly-Si TFTs) with high-k HfO2 gate dielectric were fabricated on glass substrate and tested. Double layer top gate dielectric was made of SiO2 and HfO2, which led to a capacitance equivalent thickness of 30 nm. Furthermore, the bottom gate was made of SiO2 gate dielectric with a thickness of 150 nm. Continuous-wave laser lateral crystallization was used to form poly-Si film. We achieved a high field-effect mobility of 260 cm(2)/Vs and subthreshold swing of 0.19 V/dec for TG drive. In addition, gamma-value, defined by gamma=vertical bar Delta V-th/V-BG vertical bar, was found to be approximately equal to the theoretically predicted value.

引用

页码：118 / 119

页数：2

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