Low-Voltage High-Stability InZnO Thin-Film Transistor Using Ultra-Thin Solution-Processed ZrOx Dielectric

被引：20
|
作者：
Shan, Fukai [1 ,2 ]
Liu, Ao [1 ,2 ]
Liu, Guoxia [1 ,2 ]
Meng, You [1 ,2 ]
Fortunato, Elvira [3 ,4 ]
Martins, Rodrigo [3 ,4 ]
机构：
[1] Qingdao Univ, Growing Base State Key Lab, Coll Phys, Qingdao 266071, Peoples R China
[2] Qingdao Univ, Growing Base State Key Lab, Lab New Fiber Mat & Modern Text, Qingdao 266071, Peoples R China
[3] Univ Nova Lisboa, Fac Sci & Technol, CENIMAT, Dept Mat Sci, Lisbon, Portugal
[4] CEMOP UNINOVA, Campus Caparica, P-2829516 Caparica, Portugal
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2015年 / 11卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Low-operating voltage; metal-oxide semiconductor (MOS); solution process; thin-film transistor (TFT); ROOM-TEMPERATURE FABRICATION; HIGH-PERFORMANCE; HIGH-MOBILITY; YTTRIUM-OXIDE; ZNO;
D O I：
10.1109/JDT.2014.2366933
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrOx layer. The ZrOx thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm(2) at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm(2) at 50 Hz. The InZnO TFT incorporating the UV-treated ZrOx dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of 10(7), a field-effect mobility of 14.7 cm(2)/V.s, a subthreshold swing voltage of 100 mV/decade and a threshold voltage shift under bias stress, for 2 hours less than 0.1 V. All these performances are obtained at a low operation voltage of 2 V and make it suitable for use as a switching transistor in low-power electronics applications.
引用
收藏
页码：541 / 546
页数：6
相关论文
共 50 条
  • [1] Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy
    Cai, Wensi
    Wilson, Joshua
    Zhang, Jiawei
    Park, Seonghyun
    Majewski, Leszek
    Song, Aimin
    [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (01) : 36 - 39
  • [2] Fully Solution-Processed Low-Voltage Aqueous In2O3 Thin-Film Transistors Using an Ultrathin ZrOx Dielectric
    Liu, Ao
    Liu, Guo Xia
    Zhu, Hui Hui
    Xu, Feng
    Fortunato, Elvira
    Martins, Rodrigo
    Shan, Fu Kai
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (20) : 17364 - 17369
  • [3] Low Temperature Solution-Processed InZnO Thin-Film Transistors
    Koo, Chang Young
    Song, Keunkyu
    Jun, Taehwan
    Kim, Dongjo
    Jeong, Youngmin
    Kim, Seung-Hyun
    Ha, Jowoong
    Moon, Jooho
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (04) : J111 - J115
  • [4] Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics
    Li, Mengchao
    Zhuang, Qixin
    Lu, Shirong
    Zang, Zhigang
    Cai, Wensi
    [J]. APPLIED PHYSICS LETTERS, 2023, 122 (16)
  • [5] Annealing Dependence of Solution-Processed Ultra-Thin ZrOx Films for Gate Dielectric Applications
    Liu, G. X.
    Liu, A.
    Meng, Y.
    Shan, F. K.
    Shin, B. C.
    Lee, W. J.
    Cho, C. R.
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2015, 15 (03) : 2185 - 2191
  • [6] High-performance fully amorphous bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric
    Liu, G. X.
    Liu, A.
    Shan, F. K.
    Meng, Y.
    Shin, B. C.
    Fortunato, E.
    Martins, R.
    [J]. APPLIED PHYSICS LETTERS, 2014, 105 (11)
  • [7] Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors
    Kim, Gun Hee
    Jeong, Woong Hee
    Du Ahn, Byung
    Shin, Hyun Soo
    Kim, Hee Jin
    Kim, Hyun Jae
    Ryu, Myung-Kwan
    Park, Kyung-Bae
    Seon, Jong-Baek
    Lee, Sang-Yoon
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (16)
  • [8] One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric
    Cai, Wensi
    Park, Seonghyun
    Zhang, Jiawei
    Wilson, Joshua
    Li, Yunpeng
    Xin, Qian
    Majewski, Leszek
    Song, Aimin
    [J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (03) : 375 - 378
  • [9] Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters
    Guo, Zidong
    Liu, Ao
    Meng, You
    Fan, Caixuan
    Shin, Byoungchul
    Liu, Guoxia
    Shan, Fukai
    [J]. CERAMICS INTERNATIONAL, 2017, 43 (17) : 15194 - 15200
  • [10] Complete Solution-Processed Low-Voltage Hybrid CdS Thin-Film Transistors With Polyvinyl Phenol as a Gate Dielectric
    Rao, M. G. Syamala
    Meraz-Davila, S.
    Quevedo-Lopez, M. A.
    Ramirez-Bon, R.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (05) : 703 - 706
12345