Mid-infrared quantum dot barrier photodetectors with extended cutoff wavelengths

被引：33

作者：

Hill, C. J. ^{[1
]}

Soibel, A. ^{[1
]}

Keo, S. A. ^{[1
]}

Mumolo, M. ^{[1
]}

Ting, D. Z. ^{[1
]}

Gunapala, S. D. ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 18期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1049/el.2010.1844

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method to extend the cutoff wavelength of mid-infrared barrier photodetectors by incorporating self-assembled InSb quantum dots into the active area of the detector is demonstrated. This approach enables the extension of the cutoff wavelength of barrier photodetectors from 4.2 to 6 mu m, demonstrating infrared response at temperatures up to 225 K.

引用

页码：1286 / U71

页数：2

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