The effect of impurity atoms on the multiplication of edge dislocations

被引：1

作者：

Vlasov, NM

Zaznoba, VA

机构：

来源：

TECHNICAL PHYSICS | 2001年 / 46卷 / 01期

关键词：

Atmosphere; Theoretical Analysis; Multiplication Mechanism; Impurity Atom; Edge Dislocation;

D O I：

10.1134/1.1340885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The multiplication of edge dislocations in impurity atmospheres was studied. Impurities pin a dislocation line, so that additional stress must be applied to "drive" a multiplication mechanism. An expression for diffusion redistribution of impurity atoms along a dislocation segment due to the nonuniform chemical potential was derived. The early stage of moderate-temperature creep is qualitatively explained in terms of theoretical analysis. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：51 / 54

页数：4

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