Structural and optical properties of CuAlTe2 thin films prepared by RF. sputtering

被引：6
|
作者：
Bekkay, T
Boustani, M
El Assali, K
Khiara, A
Bernéde, JC
Pouzet, J
机构：
[1] Univ Cadi Ayyad, Fac Sci Semlalia, Lab Phys Solides & Couches Minces, Marrakech, Morocco
[2] Univ Nantes, Fac Sci, Lab Phys Solides Electron, F-44322 Nantes, France
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 2005年 / 92卷 / 08期
关键词：
thin film; semiconductors; thernary compound; sputtering; X-ray diffraction; SEM; absorption; band-gap;
D O I：
10.1080/00207210412331334806
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
CuAlTe2 films have been prepared by sputtering onto water-cooled glass substrates and then heat treating under vacuum. The as-grown films exhibit p-type conductivity and a chalcopyrite structure with a preferential orientation in the ( 112) direction. The best crystallinity of the films was observed after annealing at 300 degrees C. For these films, the lattice constants were found to be: a = 5.62 angstrom and c = 12.45 angstrom. However, the approximate value of the grain size may vary bettween 60 and 120 nm from the SEM picture. The direct band-gap value at room temperature was found to be 2.45 +/- 0.02 eV for heat-treated films at 300 degrees C.
引用
收藏
页码：445 / 449
页数：5
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