III-Nitride p-channel transistors

被引：0
|
作者：
Nakajima, Akira [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan
来源：
III-NITRIDE ELECTRONIC DEVICES | 2019年 / 102卷
关键词：
2-DIMENSIONAL ELECTRON; POWER; GAS;
D O I：
10.1016/bs.semsem.2019.08.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：417 / 434
页数：18
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