Elastic moduli of gallium nitride

被引：104
|
作者：
Schwarz, RB
Khachaturyan, K
Weber, ER
机构：
[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV SCI MAT,BERKELEY,CA 94720
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 09期
关键词：
D O I：
10.1063/1.118503
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The second-order elastic constants of wurtzite phase GaN have been measured with 0.2% accuracy using a resonance ultrasound method. The measurements were done on a 0.29-mm-thick GaN crystal grown by chloride vapor-phase transport and subsequently detached from the substrate. The elastic moduli in units of GPa are: c(11) = 377, c(12) = 160, c(13) = 114, c(33) = 209, and c(44) = 81.4. The elastic moduli are used to calculate the biaxial misfit stresses expected in heteroepitaxial thin films of GaN. (C) 1997 American Institute of Physics.
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页码：1122 / 1124
页数：3
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