Microcrystalline-phase p-type a-Si:O:H windows prepared by Cat-CVD

被引：5
|
作者：
Matsumoto, Yasuhiro [1 ]
Yu, Zhenrui [2 ]
Sanchez, R. Victor [1 ]
机构：
[1] IPN, Ctr Invest & Estudios Avanzados, Dept Elect Engn, Mexico City 07360, DF, Mexico
[2] Nankai Univ, Inst Photoelect, Tianjin, Peoples R China
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2008年 / 92卷 / 05期
关键词：
boron-doped silicon oxide; solar cell windows; catalytic-CVD; microcrystalline silicon;
D O I：
10.1016/j.solmat.2007.12.008
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Different amounts of oxygen, boron-doped hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (pc-Si:H) deposition were carried out using catalytic chemical-vapor deposition (Cat-CVD) process. Pure silane (SiH4), hydrogen (H-2), oxygen (O-2), and diluted diborane (B2H6) gases were used at the deposition pressure of 0.1-0.5 Torr. The tungsten catalyst temperature (T-fil) was varied from 1700 to 2100 degrees C. Sample transmittance measurement shows an optical-band gap (E-gopt) variation from 1.45 to 2.1 eV X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than T-fil similar to 1900 degrees C. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：576 / 580
页数：5
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