Role of Shane Factor in Forming Surface Electric Field basin in RESURF Lateral Power Devices and its Optimization Design

被引:5
|
作者
Zhang, Jun [1 ,2 ]
Guo, Yu-Feng [1 ,2 ]
Pan, David Z. [1 ,2 ,3 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Elect Sci & Engn, Nanjing 210003, Jiangsu, Peoples R China
[2] Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micro P, Nanjing 210003, Jiangsu, Peoples R China
[3] Univ Texas Austin, Dept Elect & Comp Engn, Austin, TX 78712 USA
来源
基金
中国国家自然科学基金;
关键词
1-D model; shape factor; effective doping; RESURF effect; breakdown voltage; SOI; TRANSISTORS;
D O I
10.1109/JEDS.2018.2871505
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The drift region shape factor (L-d/t) plays a sophisticated role in affecting reduced surface field (RESURF) effect and breakdown characteristics. In this paper, based on the effective doping concentration (EDC) theory, an Improved EDC concept is proposed to explore the impact of shape factor on 2-D coupling effect in RESURF lateral power devices. The Improved EDC concept indicates that the sophisticated 2-D coupling in N-well resulting an effective N-I-P type drift region. Thus, the surface electric field basin may exist because of the expansion of vertical depletion region. The proposed model presents a more adaptive trait in describing 2-D coupling effect under various device structure parameters when compared to the conventional EDC model. Furthermore, a corresponding structure optimization criterion is provided to further improve the tradeoff between breakdown voltage, On-resistance and costs. The results obtained by the proposed model are found to be accurate comparing with TCAD simulation results.
引用
收藏
页码:1147 / 1153
页数:7
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