Resonant Rayleigh scattering in ordered and disordered semiconductor superlattices

被引：2
|
作者：
Bellani, V. [1 ]
Amado, M.
Diez, E.
Hey, R.
机构：
[1] Dipartimento Fis A Volta, I-27100 Pavia, Italy
[2] Univ Pavia, CNISM, I-27100 Pavia, Italy
[3] Univ Salamanca, Dept Fis Fundamental, E-37008 Salamanca, Spain
[4] CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble, France
[5] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源：
PHYSICAL REVIEW B | 2007年 / 76卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.76.075349
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the experimental study of resonant Rayleigh scattering in GaAs-AlGaAs superlattices with ordered and intentionally disordered potential profiles (correlated and uncorrelated) in the growth direction z. We show that the intentional disorder along z modifies markedly the energy dispersion of the dephasing rates of the excitons. The application of an external magnetic field in the same direction allows us to modify the exciton localization and to study the relative modification of the exciton dephasing, energies, and linewidth.
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页数：7
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