Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors

被引：1

作者：

Lee, W ^{[1
]}

Shin, J ^{[1
]}

Yang, H ^{[1
]}

Hwang, H ^{[1
]}

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Buk Gu, Kwangju 500712, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 9A期

关键词：

capacitance; tunneling current; dielectric constant; MOS capacitor;

D O I：

10.1143/JJAP.40.5308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new oxide thickness analysis method is proposed which is based on the mode transformation of experimental capacitance-voltage (C-V) data measured in the parallel and series modes. Although the samples exhibited high leakage current, we were able to extract the intrinsic oxide capacitance which was confirmed by quantum mechanical simulation.

引用

页码：5308 / 5309

页数：2

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