Narrow-stripe selective MOVPE for high-quality InGaAsP MQWS and its application to photonic integrated circuits

The recent advances in optical-fiber communication systems have required various high performance photonic components with high yield. Our approach using a narrow-stripe selective MOVPE technique has significant advantages because of its direct waveguide formation and bandgap energy control capabilities. After optimizing growth conditions, we obtained high-quality InGaAsP MQWs with comparable optical properties to that on an unmasked wafer. Excellent device characteristics and high device uniformity are also confirmed for laser diodes on a 2-inch InP wafer. Spot-size converter integrated laser diodes are also successfully fabricated, which can be used to achieve a low-cost transmitter module. Because of high structural uniformity, we obtained a fine lasing wavelength distribution for 40-channel electroabsorption modulator integrated DFB laser diodes. These integrated devices were fabricated by a process comparable to that for single-wavelength laser diodes. This direct waveguide formation process is a efficient fabrication tool for manufacturing various photonic components.