Grain boundary effect on structural, optical, and electrical properties of sol-gel synthesized Fe-doped SnO2 nanoparticles

被引:4
|
作者
Archana, V [1 ]
Mohan, Lakshmi [1 ,2 ]
Kathirvel, P. [3 ]
Saravanakumar, S. [4 ]
机构
[1] Amrita Vishwa Vidyapeetham, Dept Sci, Amrita Sch Engn, Coimbatore, Tamil Nadu, India
[2] Bharathiar Univ, Res & Dev Ctr, Coimbatore 641046, Tamil Nadu, India
[3] PSG Coll Technol, GRD Ctr Mat Res, Dept Phys, Coimbatore 641004, Tamil Nadu, India
[4] NSS Coll, Dept Phys, Pandalam 689501, Kerala, India
关键词
sol-gel; compressive strain; grain boundary; AC conductivity; PHOTOCATALYTIC DEGRADATION; MAGNETIC-PROPERTIES; PHOTOLUMINESCENCE PROPERTIES; TIN OXIDE; X-RAY; TIO2; CO; MICROSTRUCTURE; SPHERES; DOPANT;
D O I
10.1088/1674-1056/abc2c1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Tin oxide (SnO2) and iron-doped tin oxide (Sn1 - x Fe x O2, x = 0.05 wt%, 0.10 wt%) nanoparticles are synthesized by the simple sol-gel method. The structural characterization using x-ray diffraction (XRD) confirms tetragonal rutile phases of the nanoparticles. The variations in lattice parameters and relative intensity with Fe-doping concentration validate the incorporation of iron into the lattice. The compressive strain present in the lattice estimated by using peak profile analysis through using Williamson-Hall plot also exhibits the influence of grain boundary formation in the lattice. The radiative recombination and quenching observed in optical characterization by using photoluminescence spectrum (PL) and the shift in the band gap estimated from UV-visible diffused reflectance spectrum corroborate the grain boundary influence. Raman spectrum and the morphological analysis by using a field emission scanning electron microscope (FESEM) also indicate the formation of grain boundaries. The compositional analysis by using energy dispersive x-ray spectrum (EDAX) confirms Fe in the SnO2 lattice. The conductivity studies exhibit that the impendence increases with doping concentration increasing and the loss factor decreases at high frequencies with doping concentration increasing, which makes the Sn1 - x Fe x O2 a potential candidate for device applications.
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页数:10
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