Quasielastic scattering of light by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of InAs quantum dots

被引：0
|
作者：
Bairamov, BK [1 ]
Voitenko, VA
Zakharchenya, BP
Toporov, VV
Henini, M
Kent, AJ
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Nottingham, Dept Phys, Nottingham NG7 2RD, England
来源：
JETP LETTERS | 1998年 / 67卷 / 11期
关键词：
D O I：
10.1007/BF03178243
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The development of a method for registering quasielastic electronic light scattering spectra in the near-IR region, which makes it possible to detect light scattering by a photoexcited electron-hole plasma induced in a GaAs layer in the presence of a self-organized ensemble of InAs quantum dots, is reported. A substantial resonance intensification of such scattering, two orders of magnitude greater than the values established for the bulk material, is observed, and the main mechanism of such scattering is determined. (C) 1998 American Institute of Physics. [S0021-3640(98)01611-9].
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页码：972 / 977
页数：6
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