Structural and magnetic impact of Cr+-implantation into GaN thin film

被引：4

作者：

Husnain, G. ^{[1
,2
]}

Shu-De, Yao ^{[2
]}

Ahmad, Ishaq ^{[1
]}

Rafique, H. M. ^{[3
]}

机构：

[1] Quaid I Azam Univ, Natl Ctr Phys, Expt Phys Labs, Islamabad 45320, Pakistan

[2] Peking Univ, State Key Lab Nucl Phys & Technol, Beijing 100871, Peoples R China

[3] Univ Punjab, Dept Phys, Lahore 54590, Pakistan

来源：

SOLID STATE SCIENCES | 2012年 / 14卷 / 06期

关键词：

GaN thin film; TM ions implantation; Dilute magnetic semiconductors; DOPED SEMIINSULATING GAN; OPTICAL-PROPERTIES; LATTICE EXPANSION; CURIE-TEMPERATURE; FERROMAGNETISM; SEMICONDUCTORS; ACCEPTOR; GROWTH; PHASE;

D O I：

10.1016/j.solidstatesciences.2012.03.022

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Thin films of GaN with thickness of 2 mu m were synthesized on sapphire. Cr+ ions were implanted into GaN with 150 keV energy at a fluence of 3 x 10(15) cm(-2). The annealing of the samples was carried out for a short time using rapid thermal annealing (RTA). Structural properties of the implanted samples were undertaken by XRD and Rutherford backscattering. The annealed samples demonstrated lattice recovery and damages caused by implantation. The structural properties were also studied by High-resolution X-ray Diffraction (HRXRD). Magnetic measurements of the samples were performed by Alternating Gradient Magnetometer (AGM) at room temperature and by SQUID in the range of 5-380 K. The SQUID results showed ferromagnetic behavior at T = 5 K and above 380 K for Cr+-implanted GaN. (C) 2012 Elsevier Masson SAS. All rights reserved.

引用

页码：735 / 738

页数：4

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