Heat capacity, electrical and thermal conductivity of silicene

被引：22
|
作者：
Feyzi, Azra [1 ]
Chegel, Raad [1 ]
机构：
[1] Malayer Univ, Dept Phys, Fac Sci, Malayer, Iran
来源：
EUROPEAN PHYSICAL JOURNAL B | 2016年 / 89卷 / 09期
关键词：
Solid State and Materials;
D O I：
10.1140/epjb/e2016-70333-x
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We investigate the electronic heat capacity, electrical and thermal conductivity of monolayer planar and buckled silicon sheets (silicene) through tight binding approximation and Kubo-Greenwood formula. Applying and increasing dopant atoms to the system leads to opening a gap in the band structures and density of states that causes to decrease (increase) the heat capacity before (after) the Schottky anomaly. The electrical and electronic thermal conductivity of doped silicene reduces with increasing impurity strength.
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页数：8
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