High p-type GaN for Advanced Optoelectronic Devices

被引：0
|
作者：
Okumura, H. [1 ,2 ]
Malinverni, M. [2 ]
Martin, D. [2 ]
Grandjean, N. [2 ]
机构：
[1] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
[2] Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland
来源：
2016 IEEE PHOTONICS CONFERENCE (IPC) | 2016年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：661 / 662
页数：2
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