Inductively-loaded half-bridge inverter characterisation of 4H-SiC merged PiN/Schottky diodes up to 230A and 250°C

被引：15

作者：

Alexandrov, P

Zhao, JH

Wright, W

Pan, M

Weiner, M

机构：

[1] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

[2] Rutgers State Univ, Dept ECE, SiCLAB, Piscataway, NJ 08854 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 20期

关键词：

Bridge circuits - Electric charge - Electric energy storage - Electric inverters - Electric losses - Silicon carbide;

D O I：

10.1049/el:20010850

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-SiC merged PiN/Schottky diodes were characterised in an inductively-loaded half-bridge inverter circuit at high current and high temperatures (high-T) for the first time. Results show that the replacement of Si freewheeling diodes by SiC diodes results in far less storage charges in the freewheeling diodes and substantial reduction in diode turn-off energy loss, especially at high-T.

引用

页码：1261 / 1262

页数：2

共 17 条

[1] All-SiC inductively-loaded half-bridge inverter characterization of 4H-SiC power BJTs up to 400V/22 A
Luo, Y
Fursin, L
Zhao, JH
Alexandrov, P
Wright, B
Weiner, M
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1325 - 1328
[2] 4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW
Alexandrov, P., 1600, (Trans Tech Publications Ltd): : 389 - 393
[3] 4H-SiC MPS diode fabrication and characterization in an inductively loaded half-bridge inverter up to 100 kW
Alexandrov, P
Wright, B
Pan, M
Weiner, M
Fursin, L
Zhao, JH
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1177 - 1180
[4] 4.3 kV 4H-SiC merged PiN/Schottky diodes
Wu, Jian
Fursin, Leonid
Li, Yuzhu
Alexandrov, Petre
Weiner, M.
Zhao, J. H.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (07) : 987 - 991
[5] 2.5KV-30A inductively loaded half-bridge inverter switching using 4H-SiC MPS free-wheeling diodes
Li, Y
Fursin, L
Wu, J
Alexandrov, P
Zhao, JH
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1097 - 1100
[6] Half-bridge inverter using 4H-SiC gate turn-off thyristors
Tipton, CW
Bayne, SB
Griffin, TE
Scozzie, CJ
Geil, B
Agarwal, AK
Richmond, J
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) : 194 - 196
[7] Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness
Chen, Jia-Hao
Wang, Ying
Fei, Xin-Xing
Bao, Meng-Tian
Cao, Fei
CHINESE PHYSICS B, 2023, 32 (09)
[8] Recombination-induced stacking fault degradation of 4H-SiC merged-PiN-Schottky diodes
Caldwell, J. D.
Stahlbush, R. E.
Imhoff, E. A.
Hobart, K. D.
Tadjer, M. J.
Zhang, Q.
Agarwal, A.
JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)
[9] Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness
陈嘉豪
王颖
费新星
包梦恬
曹菲
Chinese Physics B, 2023, (09) : 639 - 645
[10] Investigation of the Static Performance and Avalanche Reliability of High Voltage 4H-SiC Merged-PiN-Schottky Diodes
Shen, Chengjun
Jahdi, Saeed
Mellor, Phil
Yang, Juefei
2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE), 2022,

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